PH3202 Physics for Electrical Engineering

PH3202 Physics For Electrical Engineering

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     S.Santhosh (Admin) 
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Unit:1
1. Causius-Mossetti equation**
2.quartz oscillators and filters
3. Gauss’s law and boundary conditions**

Unit:2
1.Density of energy level**
2.Thermal Conductivity (or) Energy bonds
3.Fermi level 4.dia ,para,ferro magnets**

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Unit:3
1.Carrier concentration in N-type & P-type semiconductors**
2.Hall effect an devices,Ohmic contacts,Schottky diode**
3.Energy band diagram,CC of intrincsic semiconductor

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Unit:4
1.P-N diode ,Solar cell, OLED **
2. RAre optical absorption, loss and gain
3.Scattering of light in Semi conductors**

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Unit:5
1.Carbon Nano tubes(7or13m)**,Nano wires
2.Density of States (13m)**
Extra
1.Spintronics

**Very important questions are bolded and may be asked based on this topic

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SYllabuS

UNIT I DIELECTRIC MATERIALS AND INSULATION
Matter polarization and relative permittivity: definition – dipole moment and polarization vector Ppolarization mechanisms: electronic, ionic, orientational, interfacial and total polarization – frequencydependence – local field and Causius-Mossetti equation – dielectric constant and dielectric loss –Gauss’s law and boundary conditions – dielectric strength, introduction to insulation breakdown in gases, liquids and solids – capacitor materials – typical capacitor constructions piezoelectricity,ferroelectricity and pyroelectricity – quartz oscillators and filters – piezo and pyroelectric crystals.
UNIT II ELECTRICAL AND MAGNETIC PROPERTIES OF MATERIALS 
Classical free electron theory – Expression for electrical conductivity – Thermal conductivity,
expression – Quantum free electron theory :Tunneling – degenerate states – Fermi- Dirac statistics –
Density of energy states – Electron in periodic potential – Energy bands in solids – tight binding
approximation – Electron effective mass – concept of hole. Magnetic materials: Dia, para and
ferromagnetic effects – paramagnetism in the conduction electrons in metals – exchange interaction
and ferromagnetism – quantum interference devices – GMR devices.
UNIT III SEMICONDUCTORS AND TRANSPORT PHYSICS
Intrinsic Semiconductors – Energy band diagram – direct and indirect band gap semiconductors –
Carrier concentration in intrinsic semiconductors – extrinsic semiconductors – Carrier concentration in
N-type & P-type semiconductors – Variation of carrier concentration with temperature – Carrier
transport in Semiconductors: Drift, mobility and diffusion – Hall effect and devices – Ohmic contacts –
Schottky diode.UNIT IV OPTICAL PROPERTIES OF MATERIALS PH3202 Syllabus
Classification of optical materials – Optical processes in semiconductors: optical absorption and
emission, charge injection and recombination, optical absorption, loss and gain. Optical processes in
quantum wells – Optoelectronic devices: light detectors and solar cells – light emitting diode – laser
diode – optical processes in organic semiconductor devices –excitonic state – Electro-optics and
nonlinear optics: Modulators and switching devices – plasmonics.
UNIT V NANO DEVICES
Density of states for solids – Significance between Fermi energy and volume of the material –
Quantum confinement – Quantum structures – Density of states for quantum wells, wires and dots –
Band gap of nanomaterials –Tunneling – Single electron phenomena – Single electron Transistor.
Conductivity of metallic nanowires – Ballistic transport – Quantum resistance and conductance – Carbon nanotubes: Properties and applications – Spintronic devices and applications – Optics in  quantum structures – quantum well laser. 

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