BM3353 Fundamendals of electric device

                                                           


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UNIT-1

1.PN Junction Diode 2.forward and reverse bias characteristics 3.Switching Characteristics
UNIT-2,3
1.BJT (NPN,PNP) All characteristics 2.hybrid pie model ,DMOSFET 3.MOSFET (Fully Enhancement,Depletion) 4.CE,CC,CB
UNIT-4
1.MESFET, FINFET, PINFET, CNTFET 2.Photodiode, Schottky barrier diode- Zener
3. Gallium Arsenide device, LASER diode
UNIT-5


1.LED, LCD, Opto Coupler, Solar cell 2SCR, Triac, Power BJT
-3.DMOS-VMOS


**Very important questions are bolded and may be asked based on this topic

PART-C

1.Compulsory Questions {a case study where the student will have to read and analyse the subject }
mostly asked from unit 2, 5(OR) a situation given and you have to answer on your own

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SYllabuS
UNIT I SEMICONDUCTOR DIODE
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC - Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon- model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
MOSFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- Threshold voltage -Channel length modulation, small signal Characteristics, DMOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with BJT.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction - MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Point Contact Diode, p-i-n Diode, Avalanche Photodiode, Schottky barrier diode- Zener diodeVaractor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, Thyristor - SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Opto Coupler, Solar cell, CCD.

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